In all application industries, the semiconductor industry on the target sputtering film quality requirements are the most demanding. Today, 12-inch (3 0 0) of the silicon wafer has been manufactured. While the width of the interconnect is decreasing. The requirements of the wafer manufacturer for the target are large size, high purity, low segregation and fine grain, which requires the manufactured target to have a better microstructure. The diameter and uniformity of the crystal particles of the target are considered to be the key factors affecting the deposition rate of the film. In addition, the purity of the film is critical to the purity of the target. The 99.995% (4 N5) purity copper target may meet the requirements of the semiconductor manufacturer's 0.3 5pm process, but it can not meet the current process requirements of 0.2 5 μm Rice 0.18um} art even 0.13m process, the required target purity will be required to reach 5 or even 6N or more. Compared with aluminum, copper has higher resistance to electromigration and lower resistivity, to meet! Conductor technology in the 0.25 micron below the sub-micron wiring needs but with rice other problems: copper and organic media material adhesion strength is low. And prone to reaction, resulting in the use of the process of copper interconnection of the chip was broken and open circuit. In order to solve these problems, it is necessary to provide a barrier between the copper and the dielectric layer. The barrier layer material generally uses high melting point, high resistivity metal and its compounds, so the barrier layer thickness is less than 50nm, with copper and dielectric material adhesion is good. Copper interconnection and aluminum interconnection of the barrier material are different. Need to develop new target materials. The target for the barrier layer for copper interconnection includes T a, W, T a S i, WS i, and the like. But T a, W are refractory metals. Production is relatively difficult, and now is studying molybdenum, chromium and other gold as a substitute material.